SINGLE CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER INDUCED LATERAL SEEDING PROCESSLAM HW; PINIZZOTTO RF; TASCH AF JR et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 1981-1986; BIBL. 20 REF.Article

SUBGRAIN BOUNDARIES IN LATERALLY SEEDED SILICON-ON-OXIDE FORMED BY GRAPHITE STRIP HEATER RECRYSTALLIZATIONPINIZZOTTO RF; LAM HW; VAANDRAGER BL et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 388-390; BIBL. 7 REF.Article

THE MICROSTRUCTURE OF LATERALLY SEEDED SILICON-ON-OXIDEPINIZZOTTO RF; LAM HW; VAANDRAGER BL et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 413-434; BIBL. 29 REF.Article

LATERAL ZONE GROWTH AND CHARACTERIZATION OF DEVICE QUALITY SILICON-ON-INSULATOR WAFERSLAM HW; PINIZZOTTO RF; MALHI SDS et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1083-1085; BIBL. 8 REF.Article

CHARACTERISTICS OF MOSFETS FABRICATED IN SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN ION IMPLANTATIONLAM HW; PINIZZOTTO RF; YUAN HT et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 10; PP. 356-358; BIBL. 4 REF.Article

DEVIDE FABRICATION IN (100) SILICON-ON-OXIDE PRODUCED BY A SCANNING CW-LASER-INDUCED LATERAL SEEDING TECHNIQUEHON WAI LAM; SOBCZAK ZP; PINIZZOTTO RF et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 389-394; BIBL. 21 REF.Article

REACTIONS OF FRAGMENT IONS IN METHANE: ION-MOLECULE REACTIONS IN METHANE AND HELIUM-METHANE MIXTURESHUNTRESS WT JR; LAUDENSLAGER JB; PINIZZOTTO RF JR et al.1974; INTERNATION. J. MASS SPECTROM. ION PHYS.; NETHERL.; DA. 1974; VOL. 13; NO 4; PP. 331-341; BIBL. 17 REF.Article